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Updated: Nov 17, 2025

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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
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Magnetoelectric Response of Antiferromagnetic CrI3 Bilayers
Chao Lei1, Bheema L Chittari2, Kentaro Nomura3
1Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
Nano Letters
|February 18, 2021
Summary
We predict that van der Waals (vdW) antiferromagnetic bilayers exhibit a strong magnetoelectric response, controllable via electrostatic doping in dual-gated devices. This finding opens new avenues for electrical control of magnetism.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Antiferromagnetic van der Waals (vdW) materials offer unique magnetic properties.
- Understanding the magnetoelectric response in vdW heterostructures is crucial for novel electronic applications.
Purpose of the Study:
- To predict and investigate the magnetoelectric response in vdW antiferromagnetic bilayers.
- To explore electrical control of magnetism through electrostatic doping.
Main Methods:
- Utilized Monte Carlo simulations and mean-field solutions of the anisotropic Heisenberg model.
- Informed model parameters using density functional theory and experimental data.
- Investigated bilayer CrI3 at charge neutrality.
Main Results:
- Predicted a strong, temperature-dependent magnetoelectric response in vdW antiferromagnetic bilayers with weak interlayer coupling.
- Demonstrated independent control of internal displacement fields and carrier densities in dual-gated devices.
- Calculated gate voltage-dependent total magnetization.
Conclusions:
- Layer antiferromagnetic vdW bilayers exhibit significant magnetoelectric effects.
- Electrostatic doping provides a viable method for electrical control of magnetism in these systems.
- Dual-gated devices enable precise tuning of magnetoelectric properties.
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