Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

Area of Science:

• Materials Science
• Semiconductor Physics
• Electrical Engineering

Background:

• AlGaN/GaN heterojunction field-effect transistors (HFETs) are crucial for high-power and high-frequency applications.
• Achieving unidirectional switching characteristics in HFETs typically requires complex device structures or additional components.
• There is a need for simplified device designs that integrate essential functionalities like reverse blocking.

Purpose of the Study:

• To propose and demonstrate a novel rectifying drain electrode integrated into a p-GaN gate AlGaN/GaN HFET.
• To achieve inherent unidirectional switching characteristics without external components or extra fabrication steps.
• To validate the proposed concept through simulation and experimental demonstration.

Main Methods:

• Integration of a rectifying drain electrode using an embedded p-GaN gating electrode shorted to the ohmic drain electrode.
• Technology Computer-Aided Design (TCAD) simulations to validate the device concept and electrical behavior.
• Experimental fabrication and characterization of the proposed p-GaN gate AlGaN/GaN HFET.

Main Results:

• The proposed device successfully exhibited unidirectional switching characteristics.
• The fabricated device demonstrated a threshold voltage of approximately 2 V.
• A maximum current density of approximately 100 mA/mm and a forward drain turn-on voltage of approximately 2 V were achieved.

Conclusions:

• The integrated rectifying drain electrode is an effective method for achieving unidirectional switching in p-GaN gate AlGaN/GaN HFETs.
• This approach simplifies device design, reduces fabrication complexity, and eliminates the need for separate reverse blocking devices.
• The demonstrated device performance indicates its potential for advanced power electronics applications.