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Solution-Processed Stretchable Ag2 S Semiconductor Thin Films for Wearable Self-Powered Nonvolatile Memory.

Seungki Jo1,2,3, Soyoung Cho1, U Jeong Yang1

  • 1Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|April 30, 2021
PubMed
Summary

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This summary is machine-generated.

Researchers developed ductile silver sulfide (Ag₂S) thin films for highly stretchable, self-powered memory devices. These inorganic devices offer robust performance under extreme conditions, enabling advanced wearable electronics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Inorganic semiconductors exhibit limited plasticity (<0.2%), hindering their use in stretchable electronics.
  • Developing materials with enhanced ductility is crucial for advanced electronic applications.

Purpose of the Study:

  • To synthesize ductile silver sulfide (Ag₂S) thin films using a solution-processed method.
  • To fabricate all-inorganic, self-powered, and stretchable memory devices based on Ag₂S.
  • To evaluate the mechanical, electrical, and environmental stability of the fabricated devices.

Main Methods:

  • Solution-processed synthesis of molecular Ag₂S complex solution via chemical reduction.
  • Fabrication of wafer-scale, highly crystalline Ag₂S thin films.
Keywords:
Ag 2Shealthcare monitoringresistive switchingsolution processingstretchable devicesstretchable semiconductorsthin films

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  • Characterization of thin film ductility, memory device performance (switching characteristics, endurance, retention), and stability under various conditions.

    • Main Results:

    • Ductile α-Ag₂S thin films sustained structural integrity up to 14.9% tensile strain.
    • Ag₂S-based resistive random-access memory devices exhibited a high ON/OFF ratio (≈10⁵), endurance (100 cycles), and retention (>10⁶ s).
    • Devices maintained properties up to 52% stretchability and demonstrated exceptional durability across wide temperature ranges (-196 to 300 °C) and humidity (85% RH at 85 °C for 168 h).

    Conclusions:

    • Solution-processed ductile Ag₂S thin films enable the creation of highly stretchable, robust, and self-powered memory devices.
    • These findings pave the way for high-performance, durable wearable electronics for real-world applications.
    • The developed memory devices show potential for integration into self-powered systems, such as wearable healthcare monitors.