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Related Experiment Video

Updated: Nov 6, 2025

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars

Published on: February 11, 2020

Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching.

Angela M Baracu¹, Christopher A Dirdal², Andrei M Avram¹

¹National Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Voluntari, Romania.

|May 5, 2021

Summary

This study compares cryogenic and Bosch Deep Reactive Ion Etching (DRIE) for fabricating silicon metalenses. Cryogenic DRIE shows promising results for high-aspect-ratio nanostructures in metasurface applications.

Keywords:

bosch process cryogenic etching deep reactive ion etching metasurface fabrication

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Published on: June 7, 2019

Area of Science:

Optics and Photonics
Materials Science
Nanotechnology

Background:

Metasurfaces offer high-performance, flat, and ultrathin optical devices.
Fabrication of metasurfaces with subwavelength patterns often requires high aspect ratio (HAR) etching techniques.
Bosch and Cryogenic Deep Reactive Ion Etching (DRIE) are industrially relevant methods for nanostructure fabrication.

Purpose of the Study:

To fabricate silicon (Si) metalenses using UV-Nanoimprint Lithography and cryogenic DRIE.
To compare the technological achievements and efficiencies of metalenses fabricated by cryogenic DRIE versus Bosch DRIE.
To investigate the impact of sidewall surface roughness on metalens efficiency.

Main Methods:

UV-Nanoimprint Lithography for pattern transfer.
Cryogenic Deep Reactive Ion Etching (DRIE) for Si nanostructure fabrication.
Bosch DRIE for comparative fabrication of Si nanostructures.

Main Results:

Metalenses fabricated using both Cryo-DRIE and Bosch DRIE achieved efficiencies around 39% at specified wavelengths (1.50 µm and 1.45 µm, respectively).
Theoretical efficiency for Si pillars on a Si substrate is approximately 61%.
Significant sidewall surface roughness from a non-optimized Bosch process did not prevent reasonable metalens efficiency.

Conclusions:

Cryogenic DRIE is a viable technique for fabricating high-performance Si metalenses.
Bosch DRIE can also be used for metalens fabrication, with some sidewall roughness being acceptable.
Process modifications are suggested to further enhance the efficiencies of both etching methods.