Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Memristors offer significant advantages for neuromorphic computing and advanced storage applications.
• Achieving diverse resistive switching behaviors in monolayer memristors is crucial for understanding device physics and creating fully memristive devices.

Purpose of the Study:

• To propose a simple and feasible method for achieving both digital and analog resistive switching in Cu/AlOx/Ag monolayer memristors.
• To investigate the underlying mechanisms responsible for the observed resistive switching behaviors.

Main Methods:

• Utilized atomic layer deposition with ozone and water precursors to fabricate Cu/AlOx/Ag memristors.
• Employed surface topography, Raman spectroscopy, and electrical measurements for characterization.
• Analyzed the migration and diffusion of metal ions within the AlOx dielectric layer.

Main Results:

• Successfully demonstrated digital and analog resistive switching in monolayer memristors.
• Attributed the transition between abrupt and gradual switching to metal ion migration in a less dense, rougher, and more amorphous AlOx film.
• Emulated key synaptic behaviors like long-term potentiation/depression and paired-pulse facilitation in analog memristors.

Conclusions:

• The developed method enables versatile resistive switching in monolayer memristors.
• This work represents a significant advancement towards sophisticated, multi-functional, and large-scale integrated neuromorphic devices.
• The findings contribute to the development of next-generation memory and computing technologies.