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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
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Ferroelectricity induced double-direction conductance modulation in HfZr1-O2capacitors
Bo Chen1, Shuhao Wu1, Xiaolin Yu2
1School of Information Science and Engineering (ISE), Shandong University, Qingdao, People's Republic of China.
Nanotechnology
|August 31, 2022
Summary
Artificial synapses using hafnium zirconium oxide show tunable conductance. Enhanced ferroelectricity enables gradual potentiation and depression, mimicking biological synapses for neuromorphic computing.
Area of Science:
- Materials Science
- Nanotechnology
- Computer Engineering
Background:
- Artificial synapses are crucial for neuromorphic computing, requiring gradual modulation of conductance.
- The mechanism behind conductance changes in Hf0.5Zr0.5O2-based synapses remains unclear.
- Understanding these mechanisms is key to developing advanced neuromorphic hardware.
Purpose of the Study:
- To investigate the ferroelectric properties of Hf0.5Zr0.5O2 capacitors with varying stack orders.
- To elucidate the mechanism of gradual conductance modulation in these artificial synapses.
- To explore the potential for emulating biological synaptic plasticity.
Main Methods:
- Fabrication of TiN/Hf0.5Zr0.5O2/TiN, TiN/HfO2-ZrO2/TiN, and TiN/ZrO2-HfO2/TiN capacitors using atomic layer deposition.
- Investigation of ferroelectric properties via capacitance-voltage and polarization-voltage measurements.
- Analysis of conductance modulation under identical positive and negative pulse schemes after rapid thermal annealing.
Main Results:
- Enhanced ferroelectricity observed in all fabricated devices after rapid thermal annealing.
- Devices with poor ferroelectricity exhibited gradual conductance decrease due to conductive filament dissolution.
- Capacitors with strong ferroelectricity demonstrated dual-direction conductance modulation via partial domain switching.
Conclusions:
- Rapid thermal annealing enhances ferroelectricity in Hf0.5Zr0.5O2-based capacitors.
- Ferroelectric domain switching is responsible for the dual-direction conductance modulation.
- These devices can effectively emulate the potentiation and depression processes of biological synapses for neuromorphic applications.
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