Stability-Enhanced Resistive Random-Access Memory via Stacked In Ga_1- O by the RF Sputtering Method

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Devices

Background:

• Resistive random-access memory (RRAM) device stability is a critical challenge for long-term operation.
• Oxygen vacancies significantly influence RRAM performance and endurance.
• Controlling oxygen vacancy concentration is key to enhancing RRAM reliability.

Purpose of the Study:

• To investigate the impact of a stacked InGaO structure on RRAM stability.
• To explore the role of controlled oxygen vacancies in improving RRAM performance.
• To develop a more robust RRAM switching layer.

Main Methods:

• Fabrication of a stacked InGaO switching layer using sputtering.
• Systematic variation of gallium content to control oxygen vacancies.
• Electrical characterization including DC sweeps to assess set/reset voltages and endurance.

Main Results:

• Achieved an average set voltage of 0.76 V and reset voltage of -0.66 V.
• Demonstrated low voltage coefficients of variation: 0.34 for set and 0.18 for reset.
• Exhibited high operating endurance exceeding 4000 cycles under DC sweeps.

Conclusions:

• The stacked InGaO structure effectively controls oxygen vacancies, enhancing RRAM stability.
• Adjusting elemental composition in the switching layer improves RRAM performance and operational life.
• This approach offers a promising strategy for developing reliable RRAM devices.