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On the Thermal Models for Resistive Random Access Memory Circuit Simulation.

Juan B Roldán1, Gerardo González-Cordero1, Rodrigo Picos2

  • 1Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain.

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Summary
This summary is machine-generated.

This study reviews thermal models for Resistive Random Access Memories (RRAMs), crucial for simulating device behavior. It details numerical solutions to the heat equation, integrating thermal effects into compact models for accurate RRAM design.

Keywords:
circuit simulationcompact modelingheat equationnanodevicesresistive memoriesresistive switchingthermal conductivitythermal model

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Area of Science:

  • Solid State Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Resistive Random Access Memories (RRAMs) utilize resistive switching (RS) for non-volatile memory, neuromorphic computing, and hardware cryptography.
  • Accurate compact models incorporating thermal effects are essential for the industrial development and computer-aided design of RRAM devices and circuits.
  • Existing RRAM models often address temperature effects due to the thermally activated nature of RS, but comprehensive reviews of thermal models are lacking.

Purpose of the Study:

  • To provide a comprehensive review of thermal models for RRAMs, addressing a gap in the literature.
  • To detail numerical solutions of the heat equation for RRAM structures and integrate thermal effects into advanced compact models.
  • To explore various complexities, including filament geometries, operation regimes, heat losses, and quantum effects, for accurate RRAM simulation.

Main Methods:

  • Numerical solution of the heat equation for conventional RRAM structures.
  • Development of compact models integrating thermal effects with RS kinetics and current calculations.
  • Inclusion of 3D heat equation solutions, general memristor models with temperature as a state variable, and quantum point contact formalism for thermal modeling.

Main Results:

  • Detailed description of numerical solutions for the heat equation in RRAMs.
  • Presentation of integrated compact models accounting for diverse thermal aspects like filament geometry, heat losses, and multiple temperature characterizations.
  • Formulation of a general memristor model and exploration of thermal effects within quantum point contact formalism for charge transport.

Conclusions:

  • The study provides a thorough examination of thermal models essential for RRAM simulation and design.
  • The presented models offer enhanced accuracy by incorporating detailed thermal phenomena and quantum effects.
  • This work serves as a foundational resource for the development of advanced RRAM simulation tools and understanding of thermal behavior in these devices.