Resistance
Ohm's Law
MOS Capacitor
Design Example: Resistive Touchscreen
Series R—L Circuit Transients
Linear Circuits
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Author Spotlight: Simulation and Analysis of the Temperature Rise of Ring Main Unit Equipment
Published on: July 5, 2024
Juan B Roldán1, Gerardo González-Cordero1, Rodrigo Picos2
1Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, 18071 Granada, Spain.
This study reviews thermal models for Resistive Random Access Memories (RRAMs), crucial for simulating device behavior. It details numerical solutions to the heat equation, integrating thermal effects into compact models for accurate RRAM design.
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