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Updated: Oct 31, 2025

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Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
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Temporal Evolution of Microscopic Structure and Functionality during Crystallization of Amorphous Indium-Based Oxide
Junjun Jia1, Shimpei Iwasaki2, Shingo Yamamoto2
1Global Center for Science and Engineering (GCSE), Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan.
ACS Applied Materials & Interfaces
|June 30, 2021
Summary
Crystallization of amorphous indium oxide films begins on the surface and proceeds in the bulk, influencing electronic properties. Optimized annealing tailored crystallinity and crystallite size, significantly improving carrier mobility for flexible electronics.
Area of Science:
- Materials Science
- Solid State Physics
- Thin Film Technology
Background:
- Amorphous metal-oxide thin films are crucial for flexible electronics.
- Crystallization can lead to performance degradation.
- Understanding crystallization mechanisms is vital for material stability.
Purpose of the Study:
- To elucidate the crystallization mechanism of indium-based amorphous oxide films.
- To correlate crystallization kinetics with electrical properties.
- To provide insights for optimizing thin film performance.
Main Methods:
- In situ X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements.
- Application of the modified Avrami theory.
- Systematic variation of annealing conditions and dopant incorporation (Ga, Sn).
Main Results:
- Crystallization initiates via surface nucleation, followed by bulk nucleation and growth.
- Crystal growth dimensionality transitions from 3D to 2D upon reaching the film surface.
- Optimized annealing achieved carrier mobility >100 cm²/V·s with >40% crystallinity and >70 nm crystallite size.
- Ga incorporation increased activation energy, while Sn promoted crystal growth.
Conclusions:
- The crystallization process follows modified Avrami kinetics, influenced by nucleation and growth dimensions.
- Tailoring crystallinity and crystallite size through annealing optimizes electrical properties.
- Dopants like Ga and Sn modulate crystallization kinetics and mechanisms.
- This study provides a framework for understanding structure-function relationships in amorphous oxide films.

