Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A...

Area of Science:

• Nano-electronics
• Computational physics
• Semiconductor device modeling

Background:

• Modeling nano-electronic devices is crucial for optimizing performance and guiding fabrication.
• Ultra-scaled devices require advanced simulation techniques to capture complex charge transport phenomena.

Purpose of the Study:

• To present the capabilities of the new flexible multi-scale nano TCAD simulation software, Nano-Electronic Simulation Software (NESS).
• To showcase NESS's ability to simulate charge transport in contemporary and novel ultra-scaled semiconductor devices, including quantum mechanical effects.

Main Methods:

• Developed multiple simulation modules (drift-diffusion, Kubo-Greenwood, NEGF) implemented in C++.
• Linked and self-consistently solved modules with the Poisson equation for accurate charge transport simulation.
• Deployed NESS modules to simulate advanced nano-scale devices like nanowire transistors and tunnel transistors.

Main Results:

• NESS accurately predicts and describes the underlying physics in novel ultra-scaled electronic devices.
• Simulations covered state-of-the-art and future technologies where quantum effects are significant.
• Demonstrated NESS as a robust, fast, and reliable simulation platform.

Conclusions:

• NESS is a powerful and versatile tool for simulating advanced nano-electronic devices.
• The software accurately captures quantum mechanical effects essential for next-generation electronics.
• NESS facilitates the optimization of semiconductor device performance and fabrication technology.