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High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

Patrick Fiorenza1, Mario S Alessandrino2, Beatrice Carbone2

  • 1Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy.

Nanomaterials (Basel, Switzerland)
|July 2, 2021
PubMed

Keywords:
4H-SiCpower-MOSFETscanning capacitance microscopyscanning probe microscopy

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