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Bulk micro-defect detection with low-angle illumination.

T Szarvas¹, G Molnár¹, Gy Nádudvari¹

¹Semilab Co. Ltd., Prielle Kornélia u. 4/A, 1117 Budapest, Hungary.

The Review of Scientific Instruments

|July 10, 2021

Summary

This summary is machine-generated.

Detecting semiconductor wafer defects is crucial. A new low-angle illumination method enhances Light Scattering Tomography (LST) for measuring Bulk Micro-Defects (BMDs) on patterned wafers, correlating well with standard techniques.

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Area of Science:

Semiconductor manufacturing
Materials science
Metrology

Background:

Accurate detection of Bulk Micro-Defects (BMDs) like oxygen precipitates and voids is essential for semiconductor wafer quality.
The standard Light Scattering Tomograph (LST) technique is effective for unpatterned wafers but unsuitable for patterned wafers due to surface scattering.
Device manufacturers require methods to measure BMD distributions on patterned wafers.

Purpose of the Study:

To adapt the Light Scattering Tomograph (LST) system for effective Bulk Micro-Defect (BMD) detection on patterned semiconductor wafers.
To introduce a novel low-angle illumination unit to overcome the limitations of standard LST on patterned surfaces.

Main Methods:

A modified Light Scattering Tomograph (LST) system, termed "light scattering tomograph enhanced by low-angle illumination," was developed.
The enhanced system utilizes a new low-angle illumination unit directing light into the wafer bulk via the cleaved surface.
Measurements were performed on patterned wafers using both standard and enhanced LST illumination modes.

Main Results:

The enhanced LST system successfully enabled Bulk Micro-Defect (BMD) measurements on patterned wafers.
The low-angle illumination effectively minimized interference from surface patterns.
Excellent correlation was observed between defect densities measured by the low-angle illumination and the standard LST mode.

Conclusions:

The "light scattering tomograph enhanced by low-angle illumination" provides a viable solution for BMD detection on patterned wafers.
This advancement extends the applicability of scattering-based defect detection techniques to more complex semiconductor device structures.
The method ensures reliable defect density assessment, maintaining consistency with established LST measurements.