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Selective Doping in Silicon Carbide Power Devices.

Fabrizio Roccaforte1, Patrick Fiorenza1, Marilena Vivona1

  • 1Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII, n. 5-Zona Industriale, 95121 Catania, Italy.

Materials (Basel, Switzerland)
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Summary

Selective doping of silicon carbide (SiC) is crucial for power devices. Ion implantation is the primary method, requiring high-temperature annealing that impacts device performance.

Keywords:
4H-SiCJBSMOSFETelectrical activationion implantationpost-implantation annealingpower devicesselective dopingsilicon carbide

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • Silicon carbide (SiC) is a mature wide band-gap semiconductor vital for high-efficiency power electronics.
  • Selective doping is a critical fabrication process for SiC-based diodes and transistors.

Purpose of the Study:

  • To review key selective doping techniques for silicon carbide power devices.
  • To focus on ion implantation as the predominant doping method for SiC.

Main Methods:

  • Review of established selective doping techniques for SiC.
  • Detailed examination of n-type and p-type ion implantation in SiC.
  • Analysis of post-implantation annealing effects and non-conventional methods.

Main Results:

  • Ion implantation is favored for SiC doping due to low impurity diffusivity.
  • High-temperature annealing (>1500 °C) is necessary for electrical activation post-implantation.
  • Annealing significantly impacts SiC material morphology, structure, and device performance.

Conclusions:

  • Ion implantation is the leading technique for selective doping in SiC power devices.
  • Understanding and managing the effects of high-temperature annealing is crucial for device optimization.
  • Emerging doping and annealing techniques show promise but require further development for industrial application.