Precise, subnanosecond, and high-voltage switching enabled by gallium nitride electronics integrated into complex...

Area of Science:

• Power Electronics
• Semiconductor Devices
• Applied Physics

Background:

• Complex distributed loads in scientific instruments require precise and fast switching capabilities.
• Traditional switching methods face limitations in speed, form-factor, and operating conditions.

Purpose of the Study:

• To report the use of commercial gallium nitride (GaN) power electronics for precise switching of complex distributed loads.
• To demonstrate the integration of pulsers directly into loads using GaN field effect transistors (GaNFETs).

Main Methods:

• Utilized commercial GaN field effect transistors (GaNFETs) for integrated pulser design.
• Investigated GaNFETs for their small form-factor, low-power dissipation, and high-temperature compatibility.
• Experimentally demonstrated a 250 ps, 100 V pulser and simulated performance with various load structures.

Main Results:

• Achieved precise switching of complex loads with sub-nanosecond rise times.
• Demonstrated GaN pulsers capable of generating 100 to 650 V and 5 to 60 A pulses in 0.25-8 ns.
• Successfully tested circuits under vacuum and at temperatures up to 120 °C, showing flexibility and robustness.

Conclusions:

• Integrated GaN pulsers offer a solution for high-speed, high-voltage switching in demanding environments.
• The technology reduces parasitics and eliminates the need for impedance matching, enabling faster and more precise control.
• Expected broad applications in optics, nuclear sciences, charged particle optics, and atomic physics.