Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes

Donglin Zhang1,2, Bo Peng3, Yulin Zhao1,2

  • 1Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.

Micromachines
|August 27, 2021
PubMed
Summary

Resistive random-access memory (RRAM) faces challenges in advanced nodes. Optimizing sensing schemes enhances RRAM performance for wider applications, enabling faster speeds and lower voltages.

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