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Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO
Rong Zhang1, Antimo Marrazzo1,2, Matthieu Jean Verstraete3
1Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland.
Nano Letters
|August 30, 2021
Summary
Researchers discovered lutetium oxide iodide (LuIO), a novel 2D material with a large Rashba effect. This material enables efficient electrostatic switching for spintronic devices, offering new possibilities for advanced electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Recent 2D spinFET concepts utilize spin-layer locking in materials with opposite Rashba effects.
- Centrosymmetric materials with local dipole fields are key for electrostatic switching.
Purpose of the Study:
- To propose and investigate a novel 2D material, lutetium oxide iodide (LuIO), for spintronic applications.
- To characterize LuIO's potential for electrostatic switching based on the spin-layer locking mechanism.
Main Methods:
- Theoretical prediction and simulation of a novel monolayer material, LuIO.
- Calculation of the Rashba effect magnitude and spin rotation properties.
- Analysis of gate-controlled doping and spin channel selection.
Main Results:
- LuIO exhibits one of the largest Rashba effects in 2D materials (up to kR = 0.08 Å⁻¹).
- A spin rotation of π/2 occurs over a short distance of 1 nm.
- Monolayer LuIO is predicted to be easily exfoliable with a binding energy lower than graphene.
- Doping diminishes the energy splitting of spin channels, impacting device operation.
Conclusions:
- LuIO is a promising candidate for 2D spintronic devices due to its strong Rashba effect.
- Gate-operation guidelines are established for devices based on spin-layer locking, considering doping effects.
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