Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

659
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
659

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation.

Light, science & applications·2026
Same author

Compact SPICE Model for TeraFET Resonant Detectors.

Micromachines·2025
Same author

Enhanced terahertz detection of multigate graphene nanostructures.

Nanophotonics (Berlin, Germany)·2024
Same author

Graphene-based plasmonic metamaterial for terahertz laser transistors.

Nanophotonics (Berlin, Germany)·2024
Same author

Ultrafast terahertz transparency boosting in graphene meta-cavities.

Nanophotonics (Berlin, Germany)·2024
Same author

Quantum Channel Extreme Bandgap AlGaN HEMT.

Micromachines·2024

Related Experiment Video

Updated: Oct 10, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

15.0K

Plasmonic Field-Effect Transistors (TeraFETs) for 6G Communications.

Michael Shur1,2, Gregory Aizin3, Taiichi Otsuji4

  • 1Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

Sensors (Basel, Switzerland)
|December 10, 2021
PubMed
Summary

Short-channel field-effect transistors (FETs), or TeraFETs, show promise for 6G communications. Their arrays can form plasmonic crystals for terahertz (THz) detection and generation.

Keywords:
6G communicationsfield-effect transistor arraysline-of-sight detectionplasma wave instabilitiesplasmonic crystalssilicon CMOSterahertz detectionterahertz generationterahertz radiationtravelling wave amplifier

More Related Videos

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

5.3K
Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment
09:13

Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment

Published on: April 4, 2017

7.8K

Related Experiment Videos

Last Updated: Oct 10, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

15.0K
Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

5.3K
Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment
09:13

Plasmonic Trapping and Release of Nanoparticles in a Monitoring Environment

Published on: April 4, 2017

7.8K

Area of Science:

  • Electronics
  • Telecommunications
  • Materials Science

Background:

  • The exponential growth in data traffic necessitates the development of next-generation wireless communication systems, specifically 6G, operating in the terahertz (THz) and sub-THz frequency bands.
  • Short-channel field-effect transistors (FETs), particularly silicon complementary metal-oxide-semiconductor (CMOS) devices, are emerging as key components for THz applications due to their potential for efficient radiation detection and generation.

Purpose of the Study:

  • To investigate the potential of TeraFET arrays in forming plasmonic crystals for 6G communication systems.
  • To explore the role of electron transport dynamics in TeraFETs for sub-THz and THz frequency responses.
  • To analyze the mechanism of plasma wave oscillations in FET channels for enabling THz detection and generation.

Main Methods:

  • Utilizing short-channel FETs, specifically silicon CMOS technology, for THz and sub-THz applications.
  • Investigating ballistic and quasi-ballistic electron transport phenomena within TeraFET channels.
  • Designing TeraFET arrays to function as plasmonic crystals with nanoscale unit cells.

Main Results:

  • TeraFETs demonstrate significant potential for the detection and generation of THz and sub-THz radiation.
  • TeraFET arrays can be configured as plasmonic crystals, with unit cell dimensions relevant to electron transport and radiation wavelengths.
  • Plasma wave oscillations in FET channels, excited by radiation and rectified by nonlinearities, enable intensity and phase detection.

Conclusions:

  • TeraFET plasmonic crystals offer a viable pathway for enabling 6G communications by supporting THz detection, spectrometry, amplification, and generation.
  • The control of plasma wave dynamics in FETs is crucial for realizing advanced THz functionalities.
  • These findings highlight the importance of nanoscale device engineering for future high-frequency communication systems.