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Related Experiment Video

Updated: May 24, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

Compact SPICE Model for TeraFET Resonant Detectors.

Xueqing Liu¹, Yuhui Zhang¹, Trond Ytterdal²

¹Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180, USA.

|March 6, 2025

Summary

This summary is machine-generated.

This study introduces a new compact model for Terahertz Field-Effect Transistors (TeraFETs) using a nonlinear transmission line method. The model accurately captures carrier dynamics and channel variations for improved terahertz response simulations.

Keywords:

SPICE TeraFET compact model terahertz detection

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Area of Science:

Terahertz (THz) electronics
Semiconductor device modeling

Background:

Accurate modeling of Terahertz Field-Effect Transistors (TeraFETs) is crucial for advancing THz technologies.
Existing models may not fully capture complex phenomena like non-uniform carrier density oscillations and electron inertia.

Purpose of the Study:

To develop an improved compact model for TeraFETs.
To accurately describe non-uniform carrier density oscillations and electron inertia effects in TeraFET channels.

Main Methods:

Employed a nonlinear transmission line approach for modeling.
Calculated equivalent channel components (conductance, capacitance, inductance) based on nodal voltages.
Incorporated non-uniform variations along the TeraFET channel.

Main Results:

The proposed model effectively describes non-uniform carrier density oscillations and electron inertia.
Simulations demonstrate accurate prediction of TeraFET terahertz response.
Validated against experimental data, analytical theories, and existing SPICE models (MOSA1, EKV).

Conclusions:

The nonlinear transmission line approach provides a more accurate compact model for TeraFETs.
This improved model enhances the simulation of terahertz responses, aiding in device design and optimization.