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IR Frequency Region: Fingerprint Region01:03

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IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the...
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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
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Multi-Segment TFT Compact Model for THz Applications.

Xueqing Liu1, Trond Ytterdal2, Michael Shur1,3

  • 1Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.

Nanomaterials (Basel, Switzerland)
|March 10, 2022
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Summary
This summary is machine-generated.

This study updates the Rensselaer Polytechnic Institute (RPI) thin-film transistor (TFT) model for accurate direct current (DC) and terahertz (THz) simulations. The enhanced RPI TFT model can detect sub-terahertz and THz radiation.

Keywords:
SPICETFTcompact modelterahertz

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Area of Science:

  • Semiconductor device physics
  • Integrated circuit modeling

Background:

  • Accurate modeling of thin-film transistors (TFTs) is crucial for advanced electronic applications.
  • Existing models may not fully capture the behavior of TFTs at high frequencies, particularly in the terahertz (THz) range.

Purpose of the Study:

  • To present an updated compact model for Rensselaer Polytechnic Institute (RPI) thin-film transistors (TFTs).
  • To enable accurate direct current (DC) and terahertz (THz) frequency simulations.
  • To extend the applicability of the RPI TFT model into the THz regime.

Main Methods:

  • Implementation of an updated RPI TFT compact model in Simulation Program with Integrated Circuit Emphasis (SPICE).
  • Incorporation of gate voltage-dependent channel layer thickness.
  • Utilization of channel segmentation for THz frequency simulations.
  • Introduction of two subthreshold ideality factors to model gate voltage control.
  • Evaluation of channel segment parameters (impedance, kinetic inductance, capacitances) using calculated field distribution.

Main Results:

  • The updated model accurately describes direct current (DC) characteristics.
  • The model successfully reproduces conventional RPI TFT behavior at low frequencies.
  • Measured current-voltage characteristics are fitted with sufficient accuracy.
  • The model's application is extended to THz frequency simulations.
  • Calculations indicate efficient detection of sub-terahertz and THz radiation by single or complementary TFTs.

Conclusions:

  • The enhanced RPI TFT compact model provides accurate DC and THz performance predictions.
  • The updated model facilitates the design and analysis of TFTs for THz applications.
  • TFTs demonstrate potential for sub-terahertz and THz radiation detection.