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Updated: Oct 9, 2025

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Development and validation of proton track-structure model applicable to arbitrary materials.
Tatsuhiko Ogawa1, Yuho Hirata2, Yusuke Matsuya2
1Japan Atomic Energy Agency, Research Group for Radiation Transport Analysis, Tokai, Ibaraki, 319-1195, Japan. ogawa.tatsuhiko@jaea.go.jp.
A new proton transport algorithm accurately simulates energy deposition in any material using total stopping power and secondary electron data. This method is validated for diverse materials, offering a robust tool for irradiation effect analysis.
Area of Science:
- Physics
- Materials Science
- Radiation Biology
Background:
- Conventional proton transport algorithms rely on material-specific dielectric functions.
- Accurate simulation of proton energy deposition is crucial for understanding irradiation effects.
Purpose of the Study:
- Develop a novel proton transport algorithm applicable to arbitrary materials.
- Improve the simulation of microscopic energy deposition for various applications.
Main Methods:
- The algorithm utilizes a total stopping power formula and single-differential cross sections for secondary electron production.
- It simulates energy dissipation by tracking proton interactions and secondary electron generation.
- Ionizing and non-ionizing energy losses are calculated based on energy dissipation and secondary electron kinetic energy.
Main Results:
- The algorithm accurately predicts stopping range, radial dose distribution, secondary electron spectra, and lineal energy.
- Benchmarking against experimental data in liquid water and tissue-equivalent gas showed good agreement.
- The model demonstrates accuracy for materials beyond liquid water.
Conclusions:
- The developed algorithm offers a versatile and accurate method for proton track-structure calculations in arbitrary materials.
- Its ability to handle diverse materials makes it a robust tool for analyzing irradiation effects in cells, semiconductors, and detectors.
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