Related Experiment Video
Updated: Oct 8, 2025
11:45
Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
14.7K
Time-Resolved Photoionization Detection of a Single Er3+ Ion in Silicon
Guangchong Hu1, Gabriele G de Boo1, Brett Cameron Johnson2,3
1Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia.
Nano Letters
|January 3, 2022
Summary
Researchers developed a new time-resolved method to detect single Erbium ions (Er3+) in silicon. This technique enables faster measurements and is crucial for advancing quantum systems using single optical centers.
Area of Science:
- Quantum physics
- Solid-state physics
- Materials science
Background:
- Spectroscopy on single ions is vital for quantum technologies.
- Detecting single Erbium ions (Er3+) in silicon presents challenges due to their optical properties.
- Existing methods often lack the speed and sensitivity required for large-scale integration.
Purpose of the Study:
- To develop a time-resolved detection method for single Er3+ ions in silicon nanotransistors.
- To investigate the resonant excitation and relaxation dynamics of single Er3+ ions.
- To enable faster and more efficient detection of single optical centers for quantum applications.
Main Methods:
- Utilizing charge trap ionization induced by resonant excitation.
- Implementing a time-resolved detection scheme based on a long-lived, tunable current signal.
- Performing short-pulse excitation studies to determine ion relaxation times.
Main Results:
- Successfully developed a time-resolved detection method for single Er3+ ions.
- Established an upper bound of 23.7 μs for the decay time of the 4I13/2 state of Er3+.
- Demonstrated faster repetition rates for single-ion detection compared to time-averaged methods.
Conclusions:
- The developed time-resolved method enhances the detection of single Er3+ ions in silicon.
- The findings provide a foundation for implementing single optical centers in large-scale quantum systems.
- This technique is adaptable for detecting other single optical centers in solid-state materials.
