Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

5.2K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.2K
MOS Capacitor01:25

MOS Capacitor

1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.3K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.3K
Spherical and Cylindrical Capacitor01:26

Spherical and Cylindrical Capacitor

6.1K
A spherical capacitor consists of two concentric conducting spherical shells of radii R1 (inner shell) and R2 (outer shell). The shells have  equal and opposite charges of +Q and −Q, respectively. For an isolated conducting spherical capacitor, the radius of the outer shell can be considered to be infinite.
Conventionally, considering the  symmetry, the electric field between the concentric shells of a spherical capacitor is directed radially outward. The magnitude of the field,...
6.1K
Electrostatic Boundary Conditions in Dielectrics01:27

Electrostatic Boundary Conditions in Dielectrics

1.4K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
1.4K
Capacitors01:15

Capacitors

598
Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
When a voltage source is connected to a capacitor, positive and negative charges accumulate on the opposite plates. This accumulation generates a potential difference that equals the product of the...
598

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry.

Nature communications·2026
Same author

Comparative profiles of pediatric Mendeliome: A Single-Centre 572-Whole-Exome Sequencing Study in Xinjiang.

Human heredity·2026
Same author

<i>In Situ</i> Study of the Ferroelectric-Antiferroelectric Phase Transition in Hf<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> at Elevated Temperatures up to 600 °C.

Nano letters·2026
Same author

Monolayer MoS<sub>2</sub> Sensors for Probing the Self-Heating Effect in Indium Tin Oxide Nanoelectronics.

Nano letters·2026
Same author

Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors.

Nano letters·2026
Same author

Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization.

ACS omega·2026

Related Experiment Video

Updated: Oct 7, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.7K

Ionic Control over Ferroelectricity in 2D Layered van der Waals Capacitors.

Sabine M Neumayer1, Mengwei Si2, Junkang Li2

  • 1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, 37831 Tennessee, United States.

ACS Applied Materials & Interfaces
|January 5, 2022
PubMed
Summary

The study shows that copper ion migration in CuInP2S6 materials can control ferroelectric properties. Applying specific DC voltage pulses tunes polarization, enabling novel three-state systems for advanced electronic applications.

Keywords:
ferroelectric capacitorferroelectricityhysteresisinterfacesionic conductivitymetal thiophosphatespolarization switchingvan der Waals materials

More Related Videos

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K

Related Experiment Videos

Last Updated: Oct 7, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.7K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.4K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid-State Chemistry

Background:

  • Van der Waals layered materials offer unique functional properties.
  • Copper Indium Phosphorus Sulfide (CuInP2S6) exhibits ferroelectricity driven by mobile copper ions.
  • Understanding ion migration is key to controlling ferroelectric behavior.

Purpose of the Study:

  • To investigate ionically controlled ferroelectric behavior in CuInP2S6.
  • To demonstrate tuning of ferroelectric properties via DC voltage pulses.
  • To explore the creation of multi-state systems through ionic manipulation.

Main Methods:

  • Applying selected DC voltage pulses to CuInP2S6 samples.
  • Probing ferroelectric switching using fast triangular voltage sweeps.
  • Utilizing current measurements and theoretical calculations.

Main Results:

  • Increased DC pulse duration led to higher ionic currents and internal electric field buildup.
  • Internal electric fields shifted polarization loops and increased switchable polarization by ~50%.
  • Ferroelectric switching could be deactivated and reactivated, forming three-state systems.

Conclusions:

  • The interplay of polar and ionic properties enables ionically controlled ferroelectric behavior.
  • DC voltage pulses can effectively tune ferroelectric properties and create multi-state devices.
  • CuInP2S6 offers a platform for novel ferroelectric applications through ionic manipulation.