Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

Area of Science:

• Semiconductor device physics
• Advanced lithography technologies
• Metrology for semiconductor manufacturing

Background:

• Extreme ultraviolet (EUV) lithography is critical for advanced semiconductor manufacturing.
• Accurate in situ monitoring of EUV parameters is essential for process control and yield optimization.
• Existing detection methods may lack the spatial resolution or integration capabilities required for next-generation fabrication processes.

Purpose of the Study:

• To demonstrate an on-wafer micro-detector for in situ EUV detection.
• To achieve FinFET CMOS compatibility and 1T pixel design for enhanced integration.
• To enable battery-less sensing and long-term data storage for offline analysis.

Main Methods:

• Development of a novel micro-detector architecture compatible with FinFET CMOS processes.
• Integration of a 1T pixel design for efficient data acquisition and storage.
• Implementation of in-pixel storage nodes for non-destructive, long-term data retention.

Main Results:

• Successful demonstration of an on-wafer micro-detector for 13.5 nm EUV light.
• Achieved FinFET CMOS compatibility and battery-less operation.
• Validated in-pixel storage enabling data retention for days and offline, non-destructive reading.
• High spatial resolution enabling extraction of EUV light intensity, exposure time, and energy.

Conclusions:

• The developed micro-detector is a key enabler for in situ EUV metrology in advanced lithography.
• It provides critical data for optimizing lithographic processes in 5 nm FinFET technology and beyond.
• The detector's features facilitate improved process control, yield, and the development of future semiconductor nodes.