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Related Concept Videos

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation

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Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
There are three main types of inductively coupled plasma atomic emission spectroscopy  (ICP-AES) instruments: sequential, simultaneous multichannel, and Fourier transform instruments, with the latter being less commonly used....
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Atomic Emission Spectroscopy: Instrumentation01:22

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The instrumentation of atomic emission spectrometry (AES) involves various components, including atomization devices that convert samples into gas-phase atoms and ions. There are two main types of atomization devices: continuous and discrete atomizers.  Continuous atomizers, like plasmas and flames, introduce samples in a constant stream, while discrete atomizers inject individual samples using syringes or autosamplers. The most common discrete atomizer is the electrothermal atomizer.
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UV–Vis Spectrometers01:14

UV–Vis Spectrometers

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The absorbance of UV and visible (UV–visible) radiations is measured using a UV–visible spectrophotometer. Deuterium lamps, which emit UV radiation, and tungsten lamps, which produce radiation in the visible region, are used as light sources in UV–visible spectrophotometers. A monochromator or prism is used for diffraction grating, i.e., to split the incoming radiation into different wavelengths. A system of slits is used to focus the desired wavelength on the sample cell.
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Atomic Emission Spectroscopy: Lab01:29

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AES is a powerful analytical technique, especially effective when used with plasma sources, producing abundant spectra in characteristic emission lines. The Inductively Coupled Plasma (ICP), in particular, yields superior quantitative analytical data due to its high stability, low noise, low background, and minimal interferences under optimal experimental conditions. However, newer air-operated microwave sources are emerging as promising alternatives that could be more cost-effective than...
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UV–Visible absorption spectra of conjugated dienes arise from the lowest energy π → π* transitions. The light-absorbing part of the molecule is called the chromophore, and the substituents directly attached to the chromophore are called auxochromes. A strong correlation exists between the absorption maxima, λmax, and the structure of a conjugated π system. The Woodward–Fieser rules predict the value of λmax for a given...
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    A new dynamic spectroscopic imaging ellipsometer (DSIE) offers ultrafast, high-resolution wafer mapping. This advanced ellipsometry technique enables rapid, detailed analysis of material properties across entire wafers.

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    Area of Science:

    • Optical Engineering
    • Materials Science
    • Spectroscopy

    Background:

    • Spectroscopic ellipsometry is a powerful technique for material characterization.
    • Traditional methods can be time-consuming for large-area mapping.
    • There is a need for faster, high-resolution imaging ellipsometers.

    Purpose of the Study:

    • To describe a novel dynamic spectroscopic imaging ellipsometer (DSIE).
    • To demonstrate the system's capability for ultrafast, high-resolution spatio-spectral mapping.
    • To evaluate the DSIE performance on a patterned 8-inch wafer.

    Main Methods:

    • Development of a DSIE system utilizing a monolithic polarizing interferometer.
    • Dynamic acquisition of spatio-spectral ellipsometric phase map data Δ(λ, x).
    • Measurement of a patterned 8-inch wafer with high spatial resolution (<50×50 µm²).

    Main Results:

    • The DSIE system achieves dynamic data acquisition at 30 Hz.
    • Ultrafast mapping of an 8-inch wafer was completed within one hour.
    • High spatial resolution was maintained across the entire wafer surface.

    Conclusions:

    • The developed DSIE system provides a significant advancement in high-speed, high-resolution ellipsometric imaging.
    • This technology enables efficient characterization of large-area samples, such as semiconductor wafers.
    • The DSIE offers a powerful tool for in-line process monitoring and quality control in manufacturing.