A Strategy for Extracting Full Material Coefficients of AlN Thin Film Based on Resonance Method

AlN thin film is widely used in piezoelectric MEMS devices, and the accurate characterizations of its material coefficients are critical for the optimization of the AlN thin film process and the design of AlN thin-film-based devices. However, it is difficult to extract the material coefficients of AlN in the form of thin film. This paper reports a strategy for systematically extracting full elastic coefficients, piezoelectric coefficients and dielectric constants of c-axis-oriented AlN thin film based on the resonance method outlined in IEEE Standard on Piezoelectricity Std 176-1987. In this strategy, four self-suspended resonators with length thickness extension (LTE), thickness extension (TE), radial extension (RE), lateral electric field excited thickness shear (LEF-TS) modes together with a lamb wave resonator (LWR) are specifically adopted, and the material coefficients of AlN thin film are extracted by measuring the impedance spectra of these resonators. In addition, the effects of the pad and electrodes on the resonators were systematically studied, and the corresponding procedures to eliminate their influences on the extraction accuracy of material coefficients were proposed. Finally, a complete extraction process based on the above strategy was established. The simulation results show that the strategy can achieve high accuracy for AlN thin film with different thicknesses and electrode configurations, and it can also be applied to other materials belonging to the 6 mm piezoelectric crystal class such as ZnO, ScAlN, etc.