Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

351
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
351
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

541
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
541
Energy Bands in Solids01:01

Energy Bands in Solids

1.3K
Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
1.3K
Fermi Level Dynamics01:12

Fermi Level Dynamics

364
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
364
Valence Bond Theory and Hybridized Orbitals02:38

Valence Bond Theory and Hybridized Orbitals

22.6K
According to valence bond theory, a covalent bond results when: (1) an orbital on one atom overlaps an orbital on a second atom, and (2) the single electrons in each orbital combine to form an electron pair. The strength of a covalent bond depends on the extent of overlap of the orbitals involved. Maximum overlap is possible when the orbitals overlap on a direct line between the two nuclei.
A σ bond (single bond in a Lewis structure) is a covalent bond in which the electron density is...
22.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

g-Factor Theory of Si/SiGe Quantum Dots: Spin-Valley and Giant Renormalization Effects.

Physical review letters·2026
Same author

Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling.

Physical review letters·2026
Same author

Valley splitting correlations across a silicon quantum well containing germanium.

Nature communications·2025
Same author

Operating two exchange-only qubits in parallel.

Nature·2025
Same author

Engineering Ge Profiles in Si/SiGe Heterostructures for Increased Valley Splitting.

Nano letters·2025
Same author

12-Spin-Qubit Arrays Fabricated on a 300 mm Semiconductor Manufacturing Line.

Nano letters·2024

Related Experiment Video

Updated: Sep 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K

How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces.

J P Dodson1, H Ekmel Ercan1, J Corrigan1

  • 1Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.

Physical Review Letters
|April 27, 2022
PubMed
Summary

We measured valley-orbit state energies in silicon quantum dots to understand how interface roughness, orbital confinement, and electron interactions affect them. Our findings reveal key physical contributions and offer a new method for probing quantum well interfaces.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.4K

Related Experiment Videos

Last Updated: Sep 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.9K
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.4K

Area of Science:

  • Quantum Information Science
  • Condensed Matter Physics
  • Materials Science

Background:

  • Valley-orbit states in silicon quantum dots are crucial for quantum computing applications.
  • The precise control and understanding of these states are limited by complex interactions.

Purpose of the Study:

  • To investigate the interplay between interface roughness, orbital confinement, and electron interactions in silicon quantum dots.
  • To measure and calculate one- and two-electron valley-orbit state energies.
  • To develop a new method for probing quantum well interfaces.

Main Methods:

  • Experimental measurements of valley-orbit state energies in silicon quantum dots.
  • Tuning quantum dot potentials using gate voltages.
  • Full configuration interaction calculations for energy spectrum analysis.

Main Results:

  • Quantified the energies of one- and two-electron valley-orbit states.
  • Established a clearer understanding of the interplay between physical contributions affecting these states.
  • Validated the use of valley-orbit state energies as a probe for quantum well interfaces.

Conclusions:

  • The study elucidates the complex factors governing valley-orbit states in silicon quantum dots.
  • Provides a novel approach to characterize quantum well interfaces through electronic state measurements.
  • Advances the fundamental understanding necessary for developing silicon-based quantum technologies.