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Updated: Sep 24, 2025
09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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A comprehensive investigation of MoO3 based resistive random access memory.
Jameela Fatheema1, Tauseef Shahid2, Mohammad Ali Mohammad3
1Physics Characterization and Simulations Lab, Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST) Islamabad 54000 Pakistan syedrizwan@sns.nust.edu.pk syedrizwanh83@gmail.com.
RSC Advances
|May 6, 2022
Summary
This study explores molybdenum oxide
Area of Science:
- Materials Science
- Solid State Physics
- Device Physics
Background:
- Resistive random access memory (RRAM) devices offer promising data storage solutions.
- Molybdenum oxide (MoO3) is a potential material for RRAM applications due to its switching properties.
Purpose of the Study:
- To investigate the bipolar resistive switching mechanism in MoO3-based RRAM devices.
- To elucidate the role of oxygen vacancies in the switching behavior using theoretical calculations.
Main Methods:
- Fabrication of a Metal-Insulator-Metal (MIM) structure using Mo/MoO3/Ni.
- Experimental characterization of resistive switching behavior (SET/RESET voltages).
- Density Functional Theory (DFT) calculations to study electronic structure and oxygen vacancy effects.
Main Results:
- Bipolar resistive switching observed with SET voltage ~3.3 V and RESET voltage ~-2.3 V to -2.7 V.
- Conduction mechanism identified as space-charge-limited current (ohmic and Child's law).
- DFT calculations revealed bandgap reduction with oxygen vacancies, forming conduction filaments.
Conclusions:
- The study provides a comprehensive understanding of the resistive switching mechanism in MoO3 RRAM.
- Oxygen vacancies play a crucial role in forming conduction filaments, enabling RRAM functionality.
- Results pave the way for advanced data storage applications using MoO3-based RRAM.
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