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Published on: October 13, 2017
Electrical control of biexciton Auger recombination in single CdSe/CdS nanocrystals
Ying Tang1, Qilin Qin1, Hongyu Yang2
1National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China. wxiaoyong@nju.edu.cn.
Abstract:
The Auger recombination effect is strongly enhanced in semiconductor nanocrystals due to the quantum confinement, and various strategies in chemical synthesis have been employed so far to suppress this nonradiative decay pathway of multiple excitons. Here we apply external electric fields on single CdSe/CdS giant nanocrystals at room temperature, showing that the biexciton Auger and single-exciton radiative rates can be averagely decreased by ∼40 and ∼10%, respectively. In addition to a reduced overlap of the electron-hole wavefunctions, the large decrease of biexciton Auger rate could be contributed by the enhanced exciton-exciton repulsion, while the electron-hole exchange interaction might be weakened to cause the relatively small decrease of the single-exciton radiative rate. The above findings have thus proved that the external electric field can serve as a post-synthetic knob to tune the exciton recombination dynamics in semiconductor nanocrystals towards their efficient applications in various optoelectronic devices.
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