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Direct Wafer-Scale CVD Graphene Growth under Platinum Thin-Films.
Yelena Hagendoorn1, Gregory Pandraud1, Sten Vollebregt1
1Laboratory of Electronic Components, Technology and Materials (ECTM), Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands.
Materials (Basel, Switzerland)
|May 28, 2022
Summary
Directly growing graphene on silicon wafers using platinum catalyst avoids defects and costs associated with transfer methods. This technique enables controlled, large-area, transfer-free monolayer graphene growth on oxidized silicon.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Transferring graphene to silicon wafers often introduces defects and contamination, increasing costs.
- Direct growth methods are highly desirable for scalable graphene applications on silicon.
Purpose of the Study:
- To demonstrate direct chemical vapor deposition (CVD) growth of graphene on silicon dioxide (SiO2) layers on silicon wafers.
- To achieve transfer-free, large-area monolayer graphene growth with controlled patterning.
Main Methods:
- Utilizing a platinum (Pt) thin film as a catalyst for direct CVD graphene growth on SiO2.
- Patterning the Pt film and employing tantalum (Ta) structures for selective growth blocking.
- Characterizing graphene quality using Raman spectroscopy.
Main Results:
- Demonstrated local growth of monolayer graphene on SiO2 after Pt removal, confirmed by Raman spectroscopy.
- Achieved full coverage of 4-inch oxidized silicon wafers with transfer-free monolayer graphene.
- Showcased selective graphene growth on defined areas using Ta masking.
Conclusions:
- Direct CVD growth of graphene on SiO2 using a Pt catalyst is a viable, defect-minimizing alternative to transfer methods.
- The developed technique allows for scalable, transfer-free, and site-controlled synthesis of monolayer graphene on oxidized silicon wafers.
