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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Mesoscopic Transport of Quantum Anomalous Hall Effect in the Submicron Size Regime
Gang Qiu1, Peng Zhang1, Peng Deng1
1Department of Electrical and Computer Engineering, University of California Los Angeles, Los Angeles, California 90095, USA.
Abstract:
The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in submicron QAH devices has not yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A backscattering channel is formed in narrow QAH devices through percolative hopping between 2D compressible puddles. Large resistance fluctuations are observed in narrow devices near the coercive field, which is associated with collective interference between intersecting paths along domain walls when the device geometry is smaller than the phase coherence length L_{ϕ}. Through measurement of size-dependent breakdown current, we confirmed that the chiral edge states are confined at the physical boundary with its width on the order of Fermi wavelength.
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The Hall Effect
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
The de Broglie Wavelength

