Multi-Level Resistive Switching in SnSe/SrTiO₃ Heterostructure Based Memristor Device.

Area of Science:

• Materials Science
• Solid State Physics
• Electrical Engineering

Background:

• Memristive devices are crucial for next-generation non-volatile memory and neuromorphic computing.
• Achieving reliable multilevel resistive switching is essential for increasing memory density and computational efficiency.

Purpose of the Study:

• To investigate the multilevel resistive switching characteristics of SnSe/SrTiO3 heterojunction-based memory devices.
• To evaluate the performance of these devices with different top electrodes (Ag and Cu).

Main Methods:

• Fabrication of SnSe/SrTiO3 heterojunction devices with Pt bottom electrodes and Ag or Cu top electrodes.
• Characterization of bipolar resistive switching (RS) behavior, including on/off ratio, stability, and multilevel switching.
• Utilizing voltage sweeping with current compliance for SET operations and voltage pulses without compliance for RESET operations.

Main Results:

• The SnSe/STO devices exhibited reliable and stable bipolar resistive switching with a two-orders-of-magnitude on/off ratio.
• Multilevel switching was successfully demonstrated, with devices using Ag electrodes showing eight levels and Cu electrodes showing six levels.
• The switching behavior was controlled by specific voltage sweeping and pulsing schemes.

Conclusions:

• SnSe/SrTiO3 heterojunctions are promising candidates for memristive memory devices.
• The demonstrated multilevel switching capability makes these devices suitable for synaptic applications in neuromorphic computing.
• The choice of top electrode material (Ag or Cu) influences the number of achievable resistance levels.