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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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On-chip low-loss all-optical MoSe2 modulator.

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    A new model quantifies all-optical modulators based on transition metal dichalcogenides (TMDCs). This MoSe2 modulator shows low switching energy and high extinction ratios for next-generation photonic devices.

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    Area of Science:

    • Materials Science
    • Photonics
    • Condensed Matter Physics

    Background:

    • Monolayer transition metal dichalcogenides (TMDCs) possess unique optoelectronic properties.
    • These properties include direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions.
    • Harnessing these properties is key for advanced photonic devices like modulators.

    Purpose of the Study:

    • To develop a model for all-optical control mechanisms in TMDCs.
    • To quantify the performance of a waveguide-integrated all-optical MoSe2 modulator.

    Main Methods:

    • A simple model was proposed to quantify modulator performance.
    • Simulations were conducted for a 35-μm-long Si3N4 waveguide-integrated MoSe2 modulator.

    Main Results:

    • A switching energy of 14.6 pJ was achieved for TM and TE pump signals at 480 nm.
    • Maximal extinction ratios of 20.6 dB (TM) and 20.1 dB (TE) were obtained for probe signals at 500 nm.
    • Ultra-low insertion loss (<0.3 dB) and ultrafast recovery time (50 ps) were demonstrated.

    Conclusions:

    • The proposed model effectively quantifies all-optical modulator performance in TMDCs.
    • The MoSe2 modulator exhibits excellent performance metrics for practical applications.
    • Findings facilitate the design of novel TMDC-based photonic devices.