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Vertical Barrier Heterostructures for Reliable, Robust, and High-Performance Ultraviolet Detection
Yanrong Wang1,2, Feng Wang1,2, Shuhui Li1
1CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
New vertical barrier heterostructure photodetectors (VBHPs) offer reliable ultraviolet detection. These devices, using graphene, MoS2, and h-BN, overcome power-dependent issues and show excellent stability and performance.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Low-dimensional material photodetectors often exhibit unreliable photoresponse dependent on optical power, especially in the ultraviolet spectrum.
- Barrier photodetectors offer a reliable strategy by selectively allowing high-energy photocarriers while blocking low-energy ones.
Purpose of the Study:
- To report on vertical barrier heterostructure photodetectors (VBHPs) for robust and high-performance ultraviolet detection.
- To investigate the performance characteristics of VBHPs utilizing graphene, MoS2, and h-BN.
Main Methods:
- Fabrication of VBHPs using a graphene bottom electrode, MoS2 light absorber, and h-BN energy barrier.
- Characterization of VBHPs, including noise current, photoresponse stability, responsivity, photo on-off ratio, and detectivity at various wavelengths and temperatures.
Main Results:
- Achieved ultralow noise current (1.69 × 10^-15 A Hz^-1/2) and stable photo on/off states (>10^4 cycles).
- Demonstrated light power-independent high responsivity (416.2 mA W^-1 at 360 nm) and a high photo on-off ratio (1.2 × 10^5 at 360 nm).
- Measured high detectivities (3.2 × 10^10 Jones at 266 nm, 9.9 × 10^10 Jones at 360 nm) and wide linear dynamic ranges.
Conclusions:
- The asymmetric band barrier distribution at the MoS2/h-BN interface is key to the VBHPs' superior performance.
- VBHPs demonstrate significant potential for developing new types of reliable ultraviolet detectors.
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