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All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x.

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|September 26, 2022
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Summary
This summary is machine-generated.

Intermixing in BixSe1-x nanodevices significantly impacts spin-to-charge conversion efficiency. This study reveals overestimations due to adjacent metals, crucial for spintronic device development.

Keywords:
MESO logic deviceintermixingspin-to-charge conversionsputtered BiSe

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Spintronic devices require efficient spin-to-charge conversion for signal readout.
  • Intermixing at material interfaces often affects device properties but is frequently overlooked.

Purpose of the Study:

  • To demonstrate all-electrical spin-to-charge conversion in BixSe1-x nanodevices.
  • To investigate the influence of intermixing on spin-to-charge conversion efficiency estimations.

Main Methods:

  • Fabrication of BixSe1-x nanodevices.
  • Electrical characterization of spin-to-charge conversion.
  • Analysis of intermixing effects using adjacent metal contacts.

Main Results:

  • Demonstrated all-electrical spin-to-charge conversion in BixSe1-x.
  • Observed overestimation of conversion efficiency by up to tens of times due to adjacent metals.
  • Identified intermixing-induced compositional changes and polycrystal properties as key factors.

Conclusions:

  • Intermixing significantly affects spin-to-charge conversion efficiency in BixSe1-x nanodevices.
  • Accurate material characterization is vital to avoid overestimating spin-to-charge conversion.
  • Strategies for enhancing spin-to-charge conversion signals in spintronic devices can be developed by considering intermixing effects.