Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Area of Science:

• Materials Science
• Electrical Engineering
• Optoelectronics

Background:

• Ultraviolet (UV) optoelectronics are crucial for various applications, including flame detection, space exploration, and medical imaging.
• Previous UV optoelectronic systems faced limitations in integration, power consumption, and operational efficiency.

Purpose of the Study:

• To demonstrate the first on-chip UV optoelectronic integration utilizing 4H-silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology.
• To develop a compact and efficient UV image sensor for potential use in demanding environments.

Main Methods:

• Fabrication of an integrated optoelectronic system on a 100 mm² chip using 4H-SiC CMOS.
• Integration of an image sensor with 64 active pixels and 1263 transistors.
• Implementation of serial digital, analog, and 2-bit analog-to-digital converter (ADC) outputs.

Main Results:

• Successful on-chip integration of UV optoelectronics in 4H-SiC CMOS.
• The image sensor operates at 0.39 Hz with a low maximum power consumption of 60 μW.
• Significant improvements in performance metrics compared to existing UV optoelectronic devices.

Conclusions:

• The developed 4H-SiC CMOS UV optoelectronic system represents a significant advancement in integrated UV sensing.
• The high level of integration and improved efficiency open possibilities for novel applications, particularly in harsh environments.
• This technology paves the way for advanced microcontrollers capable of operating under extreme conditions.