Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

NiO<sub><i>x</i></sub>/SAM-Mediated Interface Engineering for High-Performance PEA<sub>2</sub>SnI<sub>4</sub> Pure-Red Perovskite Light-Emitting Diodes.

The journal of physical chemistry letters·2026

Same author

Controlled-release herbicide spheres: co-crystallization of 2,4-dichlorophenoxyacetic acid with l-menthol via green oiling-out process for low leaching and high activity.

Pest management science·2026

Same author

Mechanoelectrical metamaterials for broad-range, high-sensitivity pressure sensing.

Science (New York, N.Y.)·2026

Same author

Chiral Manganese Halide Co-Crystals: A New Avenue for Efficient Circularly Polarized Luminescence.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

One-dimensional inorganic ionic polymerization for elastic minerals.

Nature communications·2026

Same author

Multi-omics elucidation of temporal patterns in tanshinone accumulation in Salvia miltiorrhiza.

BMC plant biology·2026

Same journal

Synergistic Buried Interface Engineering via Ion Exchange and Passivation for High-Performance Inverted Perovskite Solar Cells.

ACS applied materials & interfaces·2026

Same journal

In Situ Wet Coating of Ammonium Phosphomolybdate for Enhancing the Kinetics and Cycling Stability of NaNi<sub>1/3</sub>Fe<sub>1/3</sub>Mn<sub>1/3</sub>O<sub>2</sub> Cathode Material.

ACS applied materials & interfaces·2026

Same journal

Molecular Hybrids of Serum Albumin and Cobalt Phthalocyanine for Asymmetric Oxidation of C=C and C-H Bonds.

ACS applied materials & interfaces·2026

Same journal

A High-Throughput Platform for Measuring and Predicting Vitrification Behavior in Multicomponent Aqueous Solutions.

ACS applied materials & interfaces·2026

Same journal

A Brain-Targeted DNA Delivery Nanocarrier Modulator for Synergistic Therapy of Parkinson's Disease.

ACS applied materials & interfaces·2026

Same journal

Quasi-Discrete Channels of Porous Coordination Polymers for Selective Multiscenario CO<sub>2</sub> Recognition.

ACS applied materials & interfaces·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Aug 23, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Stable Indium Tin Oxide with High Mobility.

Can Yuan¹, Xinxing Liu², Ciyu Ge¹

¹Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China.

ACS Applied Materials & Interfaces

|October 31, 2022

Summary

This summary is machine-generated.

Researchers developed a new reactive plasma deposition method to create high-mobility Indium Tin Oxide (ITO) films at room temperature. This advancement offers improved conductivity and transparency for optoelectronic devices.

Keywords:

environmental stability high mobility indium tin oxide low-damage deposition reactive plasma deposition

More Related Videos

A High Performance Impedance-based Platform for Evaporation Rate Detection

A High Performance Impedance-based Platform for Evaporation Rate Detection

Published on: October 17, 2016

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Published on: August 20, 2007

Related Experiment Videos

Last Updated: Aug 23, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

A High Performance Impedance-based Platform for Evaporation Rate Detection

A High Performance Impedance-based Platform for Evaporation Rate Detection

Published on: October 17, 2016

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes

Published on: August 20, 2007

Area of Science:

Materials Science
Condensed Matter Physics
Optoelectronics

Background:

Indium Tin Oxide (ITO) is a critical transparent conductive material for optoelectronic devices, with a market value of $1.7 billion.
Traditional magnetron sputtering methods for ITO deposition face limitations, including high preparation temperatures (>350 °C) and low carrier mobility (∼30 cm² V⁻¹ s⁻¹).

Purpose of the Study:

To develop an adjustable, low-temperature deposition process for high-mobility Indium Tin Oxide (ITO) films.
To enhance conductivity, infrared transparency, and environmental stability of ITO films for advanced optoelectronic applications.

Main Methods:

Utilized a reactive plasma deposition (RPD) system for ITO film fabrication.
Optimized oxygen flow during the RPD process to tune film properties.
Investigated film characteristics including carrier mobility, transparency, surface roughness, and stability under various environmental conditions.

Main Results:

Achieved ITO films with high carrier mobility (62.1 cm² V⁻¹ s⁻¹) and high average transparency (89.7% at 800-2500 nm) at room temperature.
Deposited films exhibited a smooth surface (roughness of 0.3 nm).
Demonstrated strong environmental adaptability with minimal carrier mobility changes under heat, humidity, radiation, and alkali exposure.

Conclusions:

The RPD method provides a low-damage, low-temperature, large-area, and high-throughput approach for fabricating high-performance ITO films.
These stable, high-mobility ITO films are suitable for a wide range of full-spectrum optoelectronic applications, including tandem solar cells and infrared photodetectors.