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Highly Reproducible Heterosynaptic Plasticity Enabled by MoS2/ZrO2- Heterostructure Memtransistor
Hye Yeon Jang1,2, Ojun Kwon1,2, Jae Hyeon Nam1,2
1Department of Advanced Material Engineering, Chungbuk National University, Chungdae-ro 1, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea.
ACS Applied Materials & Interfaces
|November 11, 2022
Summary
This study introduces a novel MoS2/ZrO2- memtransistor for neuromorphic computing. The device exhibits reliable, tunable resistive switching, enabling efficient synaptic functions with high accuracy in deep neural network simulations.
Area of Science:
- Materials Science
- Nanotechnology
- Neuroscience
Background:
- Polycrystalline MoS2 memtransistors are key for neuromorphic circuitry due to tunable conductance.
- Reproducibility issues arise from controlling sulfur defects in MoS2 grain boundaries.
Purpose of the Study:
- To demonstrate reliable heterosynaptic characteristics in a MoS2/ZrO2- heterostructure memtransistor.
- To investigate the impact of a ZrO2- layer on MoS2 memtransistor performance.
Main Methods:
- Fabrication of a MoS2/ZrO2- heterostructure memtransistor.
- Characterization using ultraviolet photoelectron spectroscopy (UPS) and energy-band structure analysis.
- Testing of resistive switching, endurance, and pulse cycling behavior.
Main Results:
- The MoS2/ZrO2- memtransistor showed effectively modulated Schottky barrier height.
- Achieved dual-terminal stimulated multilevel conductance with tunable resistive switching.
- Demonstrated over 7000 endurance cycles and stable pulse behavior.
Conclusions:
- The MoS2/ZrO2- memtransistor offers reliable heterosynaptic characteristics for neuromorphic systems.
- Achieved high recognition accuracy (~92%) in deep neural network simulations for handwritten digits.
- Simple structure facilitates complex neural circuitry implementation.
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