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High frequency characterization of Si N dielectrics for artificial magnetoelectric devices
Jaianth Vijayakumar1, Marcos Gaspar2, Laura Maurel3,4
1Swiss Light Source, Paul Scherrer Institute (PSI), 5232 Villigen PSI, Switzerland.
Journal of Materials Science
|November 18, 2022
Summary
Stoichiometric silicon nitride membranes show promise for high-frequency magnetoelectric devices by minimizing defects. This research explores defect impacts on dielectric properties for improved device performance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Magnetoelectric coupling in artificial multiferroics relies on interfacial charge modulation.
- Achieving fast time responses in these systems remains a significant challenge.
- Silicon nitride (SiN) thin films are potential dielectric materials for magnetoelectric devices.
Purpose of the Study:
- To investigate the frequency response of stoichiometric and non-stoichiometric SiN membranes.
- To determine the influence of defects, charge traps, and ion mobility on interfacial charge modulation.
- To assess the suitability of SiN for high-frequency magnetoelectric applications.
Main Methods:
- Characterization of SiN thin film membranes (stoichiometric and non-stoichiometric).
- Analysis of frequency response up to 100 MHz.
- Evaluation of interfacial charge modulation via screening, considering depletion layers and defect mobility.
Main Results:
- Dielectric and magnetoelectric properties are significantly influenced by extrinsic doping from point defects.
- Non-stoichiometric SiN exhibits dielectric behavior dominated by charge traps and/or mobile ions.
- Stoichiometric SiN demonstrates a reversible, doped semiconductor-like response, reaching intrinsic dielectric behavior at high frequencies.
Conclusions:
- Stoichiometric SiN membranes are potentially suitable for high-frequency magnetoelectric device applications.
- Minimizing defect impact on dielectric properties is crucial for achieving high-frequency magnetoelectric responses.
- Understanding defect-dominated behavior is key to optimizing artificial multiferroic systems.
