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Updated: Aug 17, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Secondary electron count imaging in SEM
Akshay Agarwal1, John Simonaitis1, Vivek K Goyal2
1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, United States of America.
Abstract:
Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM image quality for a given imaging dose. SE count imaging, which uses the direct count of SEs detected from the sample instead of the average signal intensity, would overcome this limitation and lead to improvement in SEM image quality. In this paper, we implement an SE count imaging scheme by synchronously outcoupling the detector and beam scan signals from the microscope and using custom code to count detected SEs. We demonstrate a ∼30% increase in the image signal-to-noise-ratio due to SE counting compared to conventional imaging. The only external hardware requirement for this imaging scheme is an oscilloscope fast enough to accurately sample the detector signal for SE counting, making the scheme easily implementable on any SEM.
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