Multiconfiguration b-AsP-based doping systems with enriched elements (C and O): novel materials for spintronic...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Black arsenical phosphorus (b-AsP) is a promising bimetallic alloy with excellent electronic and structural properties.
• Current limitations hinder the application of b-AsP in magnetic devices.
• Tailoring material properties through doping is a key strategy in materials science.

Purpose of the Study:

• To investigate the possibility of inducing magnetism in b-AsP through non-metallic atom doping.
• To explore band gap modulation and electronic structure variations in doped b-AsP configurations.
• To evaluate the potential of magnetic b-AsP for spintronic applications.

Main Methods:

• Computational simulations of non-metallic atom doping (specifically Carbon and Oxygen) in three different AsP configurations.
• Analysis of electronic structure and wave functions to determine the source of magnetism.
• Fabrication and simulation of field-effect transistors based on doped armchair AsP3 nanoribbons.

Main Results:

• Doping b-AsP with Carbon (C) and Oxygen (O) successfully induces magnetism.
• The magnetic moment originates from orbital coupling between C, O atoms, and the AsP lattice.
• Simulated field-effect transistors exhibit significant negative differential conductivity and efficient spin filtering.

Conclusions:

• Carbon and Oxygen doping transforms b-AsP into a viable magnetic material.
• The study elucidates the mechanism behind magnetism in doped b-AsP.
• Magnetic b-AsP nanoribbons show great promise for future spintronics and magnetic device applications.