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Updated: Aug 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT)

Muhaimin Haziq1, Shaili Falina2,3, Asrulnizam Abd Manaf2

  • 1Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, Sains@USM, Bayan Lepas 11900, Pulau Pinang, Malaysia.

Micromachines
|December 23, 2022
PubMed

Keywords:
2DEGGaNHEMTschallengesopportunities

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