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Updated: Aug 15, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Can Fu1, Zhi-Yuan Li1, Jiang Wang1
1School of Microelectronics, Hefei University of Technology, Hefei230009, China.
Researchers developed a simple wavelength sensor using methylammonium lead iodide (MAPbI3) single crystals. This sensor accurately distinguishes light wavelengths from 265 to 860 nm, enabling advanced full-color imaging applications.
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