Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices

Area of Science:

• Materials Science
• Condensed Matter Physics
• Solid-State Chemistry

Background:

• Ferroelectric (FE) materials possess spontaneous electric polarization reversible by an external electric field.
• Examples include BiFeO3, P(VDF-TrFE), and CuInP2S6.
• Combining FE materials with low-dimensional systems creates synergistic effects.

Purpose of the Study:

• To review the fundamental aspects of ferroelectric materials.
• To focus on the state-of-the-art of ferroelectric-based optoelectronic devices.
• To discuss future directions in this research area.

Main Methods:

• Discussion of the origin of FE polarization.
• Analysis of extrinsic FE materials.
• Methods for FE polarization quantification.
• Review of device structures and their impact on performance.

Main Results:

• FE materials significantly influence the energy band of channel materials.
• Device architectures critically affect photodetector (PD) performance.
• Synergies between FE and low-dimensional materials are key for device enhancement.

Conclusions:

• Ferroelectric materials are crucial for next-generation optoelectronic devices.
• Understanding FE polarization mechanisms and material integration is vital.
• Further research into FE-based devices promises advancements in solar cells, PDs, and memory.