Giant Periodic Pseudomagnetic Fields in Strained Kagome Magnet FeSn Epitaxial Films on SrTiO3(111) Substrate
Huimin Zhang1,2, Michael Weinert3, Lian Li1
1Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506, United States.
Nano Letters
|March 13, 2023
Summary
Strain engineering of quantum materials like FeSn films creates large pseudomagnetic fields. This study shows nanoscale control over topological magnet electronic properties using epitaxial strain.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Materials
Background:
- Dirac materials exhibit linearly dispersing bands, making them sensitive to external stimuli.
- Strain engineering in quantum materials can induce significant changes in electronic properties via pseudomagnetic fields.
- Kagome magnets, like FeSn, offer a unique platform for exploring exotic electronic phenomena.
Purpose of the Study:
- To investigate the effects of epitaxial strain on the electronic properties of FeSn kagome magnet films.
- To demonstrate the generation of a significant pseudomagnetic field in FeSn films through strain.
- To explore nanoscale strain engineering for tuning topological magnet properties.
Main Methods:
- Growth of FeSn films, composed of stanene and Fe3Sn kagome layers, using molecular beam epitaxy on SrTiO3(111) substrates.
- Utilized scanning tunneling microscopy/spectroscopy (STM/STS) to probe the electronic structure.
- Analyzed differential conductance peaks to identify Landau levels indicative of a pseudomagnetic field.
Main Results:
- Successfully grew thin FeSn films (below 10 nm) exhibiting periodic deformation of the stanene honeycomb layer due to epitaxial strain.
- Observed differential conductance peaks consistent with Landau levels.
- Quantified a pseudomagnetic field exceeding 1000 Tesla, induced by nanoscale strain.
Conclusions:
- Epitaxial strain can effectively deform the honeycomb layer in FeSn films, creating a substantial pseudomagnetic field.
- This work validates the use of strain engineering to control the electronic properties of topological magnets at the nanoscale.
- FeSn films grown on SrTiO3 substrates are promising candidates for strain-tunable quantum electronic devices.
Keywords:
FeSnkagome magnetmolecular beam epitaxyperiodic pseudomagnetic fieldsscanning tunneling microscopy/spectroscopystrain engineeringMore Related Videos
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