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Structure and Technological Parameters' Effect on MISFET-Based Hydrogen Sensors' Characteristics.
Boris Podlepetsky1, Nikolay Samotaev1, Maya Etrekova1
1Micro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe Highway 31, 115409 Moscow, Russia.
Sensors (Basel, Switzerland)
|March 30, 2023
Summary
This study models how structure and technological parameters affect metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensors. The models predict sensor performance, aiding in the design of advanced gas analysis devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Sensor Technology
Background:
- Hydrogen sensors are crucial for safety and industrial processes.
- Metal-insulator-semiconductor field-effect transistors (MISFETs) are promising sensitive elements for hydrogen detection.
- Understanding the impact of manufacturing parameters on sensor performance is vital for reliable devices.
Purpose of the Study:
- To investigate the influence of structure and technological parameters (STPs) on the metrological characteristics of MISFET-based hydrogen sensors.
- To develop compact electrophysical and electrical models for predicting MISFET hydrogen sensor performance.
- To simulate hydrogen sensitivity beyond threshold voltage, including gate voltages and drain currents in various operating modes.
Main Methods:
- Development of general electrophysical and electrical models for n-channel MISFETs.
- Simulation of hydrogen sensitivity considering changes in MIS structure charges.
- Quantitative assessment of STPs' effects on MISFET performance metrics using a Pd-Ta2O5-SiO2-Si structure.
- Utilizing model parameters derived from previous experimental results.
Main Results:
- Proposed models accurately connect drain current and voltages with STPs for MISFET hydrogen sensors.
- The models enable simulation of hydrogen sensitivity in weak and strong inversion modes.
- A quantitative analysis revealed the impact of STPs on conversion function, sensitivity, measurement errors, and operating range.
- For submicron gate insulators, insulator type and thickness were identified as key influencing parameters.
Conclusions:
- The developed models provide a comprehensive approach to understanding MISFET hydrogen sensor behavior.
- STPs significantly influence the metrological characteristics of MISFET-based hydrogen sensors.
- These refined models can guide the design and optimization of MISFET gas analysis devices and microsystems.
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