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Related Concept Videos

Raman Spectroscopy: Overview01:20

Raman Spectroscopy: Overview

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The underlying principle of Raman spectroscopy is based on the interaction between light and matter, specifically molecules' inelastic scattering of photons. When a monochromatic beam of light, typically from a laser source, interacts with a sample, most scattered light has the same frequency as the incident light. This is known as Rayleigh scattering.
However, a small fraction of the scattered light exhibits a frequency shift due to the exchange of energy between the incident photons and...
481
Raman Spectroscopy Instrumentation: Overview01:26

Raman Spectroscopy Instrumentation: Overview

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A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
The monochromatic laser source, typically using visible or near-infrared radiation, generates a highly focused beam of light. This light interacts with the molecules of the sample, scattering some of the light. Liquid and gaseous samples are usually tested in ordinary glass capillaries, while solids can be analyzed as powders packed in capillaries or as potassium...
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IR Spectroscopy: Hooke's Law Approximation of Molecular Vibration01:16

IR Spectroscopy: Hooke's Law Approximation of Molecular Vibration

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A covalently bonded heteronuclear diatomic molecule can be modeled as two vibrating masses connected by a spring. The vibrational frequency of the bond can be expressed using an equation derived from Hooke's law, which describes how the force applied to stretch or compress a spring is proportional to the displacement of the spring. In this case, the atoms behave like masses, and the bond acts like a spring.
According to Hooke's law, the vibrational frequency is directly proportional to...
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Energy Bands in Solids01:01

Energy Bands in Solids

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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
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Molecular Spectroscopy: Absorption and Emission01:14

Molecular Spectroscopy: Absorption and Emission

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Molecules possess discrete energy levels called quantum states. Unlike atoms, which have simpler energy levels, molecules possess additional rotational and vibrational energy levels.  Each energy level is separated by an energy gap, with the gaps between adjacent electronic, vibrational, and rotational levels varying significantly. The three types of energy levels in a diatomic molecule are shown in Figure 1.
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Band Theory02:35

Band Theory

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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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GaSb band-structure models for electron density determinations from Raman measurements.

Maicol A Ochoa1,2, James E Maslar1, Herbert S Bennett1,3

  • 1National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.

Journal of Applied Physics
|May 18, 2023
PubMed
Summary
This summary is machine-generated.

Raman spectroscopy accurately measures carrier concentration in n-type GaSb epilayers by modeling phonon-plasmon modes. Using ellipsoidal L minima in conduction-band models improves accuracy for doped semiconductors.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Spectroscopy

Background:

  • Accurate characterization of carrier concentration in semiconductors is crucial for device performance.
  • Raman spectroscopy offers a nondestructive method for probing electronic properties.
  • Gallium Antimonide (GaSb) is a key material in optoelectronics and high-speed electronics.

Purpose of the Study:

  • To develop and validate Raman spectroscopy for quantifying carrier concentrations in n-type GaSb epilayers.
  • To investigate the impact of different conduction-band models on carrier concentration measurements.
  • To enhance the nondestructive characterization of transport properties in doped semiconductors.

Main Methods:

  • Utilized Raman spectroscopy to measure coupled optical phonon-free carrier plasmon mode spectra.
  • Employed the Lindhard-Mermin optical susceptibility model incorporating contributions from Γ and L conduction-band minima.
  • Evaluated three conduction-band models: isotropic/parabolic, non-parabolic Γ/isotropic parabolic L, and non-parabolic Γ/ellipsoidal parabolic L minima.

Main Results:

  • The model incorporating ellipsoidal L minima yielded consistently higher carrier concentrations.
  • The ellipsoidal L minima model showed the best agreement with carrier-dependent mobility-ratio values derived from Hall effect measurements.
  • Isotropic L minima models likely underestimate carrier concentration in GaSb at room temperature and higher doping levels.

Conclusions:

  • The inclusion of ellipsoidal L minima is essential for accurate Raman-based carrier concentration measurements in n-type GaSb.
  • Raman spectroscopy, when combined with appropriate band structure models, is a powerful tool for semiconductor characterization.
  • Findings have implications for modeling electrical measurements and calculating electron mobility in GaSb-based devices.