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Specular Electron Focusing between Gate-Defined Quantum Point Contacts in Bilayer Graphene
Josep Ingla-Aynés1, Antonio L R Manesco1, Talieh S Ghiasi1
1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nano Letters
|June 8, 2023
Summary
We observed specular electron reflections in bilayer graphene using quantum point contacts, enabling phase-coherent transport. This finding is crucial for developing advanced valleytronic devices and ballistic interconnects.
Area of Science:
- Condensed matter physics
- Materials science
- Quantum electronics
Background:
- Bilayer graphene (BLG) exhibits unique electronic properties due to its layered structure.
- Quantum point contacts (QPCs) are essential for controlling and probing electron transport in nanoscale devices.
- Understanding electron behavior in ballistic channels is key for future electronic applications.
Purpose of the Study:
- To investigate the effects of size quantization and trigonal warping on transverse electron focusing (TEF) in BLG.
- To analyze electron reflection properties at gate-defined edges in a ballistic BLG channel.
- To explore the potential of BLG for novel electronic and valleytronic devices.
Main Methods:
- Fabrication of a multiterminal ballistic bilayer graphene channel.
- Utilizing electrostatic gating to define multiple spin- and valley-degenerate quantum point contacts (QPCs).
- Performing transverse electron focusing (TEF) measurements with varying QPC geometries and crystallographic orientations.
Main Results:
- Observed eight clear peaks in TEF spectra with comparable amplitudes, indicating specular electron reflections.
- Demonstrated phase-coherent transport and weak quantum interference signatures at low temperatures.
- Showcased the visibility of TEF peaks up to 100 K, despite small gate-induced bandgaps (≲45 meV).
Conclusions:
- Specular reflection at gate-defined edges preserves pseudospin information, crucial for valleytronics.
- Ballistic transport in BLG channels is achievable and robust over a range of temperatures.
- The results pave the way for realizing ballistic interconnects in next-generation valleytronic devices.
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