Mobility Enhancement in CVD-Grown Monolayer MoS₂ Via Patterned Substrate-Induced Nonuniform Straining

The extraordinary mechanical properties of two-dimensional transition-metal dichalcogenides make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of nonuniform strain in modulating optical, electronic, and transport properties of semiconducting, chemical vapor deposited monolayer MoS₂, on periodically nanostructured substrates. A combination of spatially resolved spectroscopic and electronic properties explore and quantify the differential strain distribution and carrier density on a monolayer, as it conformally drapes over the periodic nanostructures. The observed accumulation in electron density at the strained regions is supported by theoretical calculations which form the likely basis for the ensuing ×60 increase in field effect mobility in strained samples. Though spatially nonuniform, the pattern-induced strain is shown to be readily controlled by changing the periodicity of the nanostructures thus providing a robust yet useful macroscopic control on strain and mobility in these systems.