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RF-SOI Low-Noise Amplifier Using RC Feedback and Series Inductive-Peaking Techniques for 5G New Radio Application
1Department of Information and Electronic Engineering, Mokpo National University, Muan 58554, Republic of Korea.
Sensors (Basel, Switzerland)
|July 14, 2023
Summary
This study introduces a novel low-noise amplifier (LNA) optimized for the N79 band, achieving 600 MHz bandwidth with excellent noise performance. The design integrates matching networks and utilizes resistive feedback and inductive peaking for enhanced RF applications.
Area of Science:
- Electrical Engineering
- Radio Frequency (RF) Engineering
- Semiconductor Device Physics
Background:
- Broadband low-noise amplifiers (LNAs) are crucial for modern wireless communication systems, particularly in frequency bands like N79.
- Achieving wide bandwidth and low noise simultaneously presents a significant design challenge due to trade-offs in traditional resistive feedback topologies.
- Optimizing impedance matching is essential for maximizing signal transfer and minimizing noise in RF circuits.
Purpose of the Study:
- To design and simulate a high-performance low-noise amplifier (LNA) with integrated matching networks for the N79 band (4.4 GHz to 5.0 GHz).
- To investigate and optimize the resistive feedback topology and employ inductive peaking to enhance both bandwidth and noise performance.
- To demonstrate a practical LNA design using RF-Silicon-On-Insulator (RF-SOI) technology suitable for demanding wireless applications.
Main Methods:
- Utilized a resistive feedback topology combined with inductive peaking for broadband operation.
- Optimized the feedback resistor value specifically for the N79 band to improve noise performance.
- Integrated input and output matching networks directly into the LNA design.
- Employed RF-SOI technology for fabrication.
Main Results:
- Achieved a bandwidth of 600 MHz within the N79 band (4.4 GHz to 5.0 GHz).
- Simulated gains of 20.68 dB and 19.94 dB across the specified frequency range.
- Obtained low noise figures of 1.57 dB and 1.73 dB.
- Integrated input/output matching networks and reported a power consumption of 9.95 mA at 1.2 V supply.
Conclusions:
- The proposed LNA design effectively balances wide bandwidth and low noise performance for the N79 band.
- The optimized resistive feedback and inductive peaking techniques are key to achieving superior RF performance.
- The integrated design using RF-SOI technology offers a promising solution for next-generation wireless communication systems.
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