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CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency.
Olli E Setälä1, Martin J Prest2, Konstantin D Stefanov2
1Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland.
Small (Weinheim an Der Bergstrasse, Germany)
|July 26, 2023
Summary
Surface nanoengineering enhances complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) by improving spectral range and photosensitivity. This novel approach reduces dark current, offering a promising alternative to conventional performance-limiting methods.
Area of Science:
- Materials Science
- Electrical Engineering
- Optoelectronics
Background:
- Complementary metal-oxide-semiconductor (CMOS) image sensors (CIS) are vital in modern technology.
- Conventional methods like antireflective coatings limit CIS performance by causing optical and electrical losses.
Purpose of the Study:
- To investigate the impact of surface nanoengineering on CIS performance.
- To replace traditional methods with nanostructured surfaces and atomic layer deposition for enhanced device capabilities.
Main Methods:
- Applied surface nanoengineering, including nanostructured surfaces and atomic layer deposited passivation.
- Utilized a commercial backside illuminated CIS for testing.
- Evaluated spectral range, photosensitivity, dark current, and photoresponse uniformity.
Main Results:
- Achieved >90% quantum efficiency across the 300-700 nm wavelength range.
- Reduced dark current by a factor of three.
- Observed slightly improved photoresponse uniformity, with a note on potential optical crosstalk due to nanostructures.
Conclusions:
- Surface nanoengineering significantly enhances CIS spectral range and photosensitivity.
- This technique offers a superior alternative to conventional methods for improving CIS performance.
- Surface nanoengineering holds vast potential for diverse CIS applications.
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